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Intel, Micron proclaim "revolutionary" memory chips

JEDEC SmartBrief | Jul 29, 2015

Memory chips that run 1,000 times faster than existing NAND flash memory will help power smartphones, tablets and other electronics, Intel and Micro proclaimed Tuesday, calling their "3D Xpoint" the biggest breakthrough in memory technology in more than 25 years. They said the chips will also have more endurance than current models and will store more data. Bloomberg (07/28) Forbes (07/28) The Wall Street Journal (tiered subscription model) (07/28)


Memory tech from Intel and Micron dispenses with transistors

JEDEC SmartBrief | Jul 30, 2015

Analysis: Trends in 3D memory chips

JEDEC SmartBrief | Jul 31, 2015

Qualcomm's CEO: We'll be "actor" in chipmaker moves

JEDEC SmartBrief | Jul 29, 2015

Tsinghua submits $23B bid for Micron, against all odds

JEDEC SmartBrief | Jul 29, 2015

SiGe technology may help scaling for logic chips

JEDEC SmartBrief | Jul 28, 2015

IC Insights: M&A "mania" takes hold in semiconductor industry

JEDEC SmartBrief | Aug 03, 2015

NXP sells CMOS sensor business to ams

JEDEC SmartBrief | Jul 29, 2015

Oracle to detail "Sonoma" server processor

JEDEC SmartBrief | Jul 30, 2015

Analyst sees Micron and Intel forging closer ties

JEDEC SmartBrief | Jul 28, 2015


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DDR4 design specifications published

JEDEC SmartBrief | Aug 03, 2015

HGST engineer receives JEDEC Outstanding Leadership Award

JEDEC SmartBrief | Jul 31, 2015

JEDEC announces availability of 300 mV interface standard

JEDEC SmartBrief | Jul 31, 2015

JEDEC publishes JEP159A: Procedure for the Evaluation of Low-k/Metal Inter/Intra-Level Dielectric Integrity

JEDEC SmartBrief | Jul 30, 2015

Updates to JEP95: JEDEC Registered and Standard Outlines for Solid State and Related Products now available for free download

JEDEC SmartBrief | Jul 15, 2015




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